| PART |
Description |
Maker |
| BG3140 BG3140R |
RF-MOSFET - Package: SOT363
DUAL N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| BF965 |
Silicon N-Channel MOSFET Tetrode
|
Siemens
|
| BF5020R BF5020W BF5020WE6327 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BF2040R BF2040W BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF1005SR BF1005SW BF1005S |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gp=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BF1009SR BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Intertechnology,Inc.
|
| BF961 |
N-Channel Dual Gate MOS‐Fieldeffect Tetrode, Depletion Mode
|
Vishay
|
| BF988 |
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
